The semiconductor material used in devices is doped under

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Once this transition is excited and the relaxation is acting, the magnetization is spread over the “bulk” nuclei (the major part of the detected nulcei in a NMR experiment) via the nuclear dipole network. This polarizing mechanism is optimal when the exciting microwave frequency shifts up or down by the nuclear Larmor frequency from the electron Larmor frequency in the discussed two spin system. The direction of frequency shifts corresponds to the sign of DNP enhancements.

Designer Fake Bags Doping a semiconductor such as silicon with a small proportion of an atomic impurity, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called “p type”, and when it contains excess free electrons it is known as “n type”, where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p and n type dopants. Designer Fake Bags

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